Fraunhofer Solar Institute and EV Group jointly develop next-generation battery technology

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The German Fraunhofer Institute for Solar Energy Systems has recently launched a collaborative research initiative with the EV Group. Together, they have developed an innovative device and associated processes that enable the direct bonding of silicon wafers at room temperature. This breakthrough not only ensures excellent electrical conductivity and optical transparency but also opens up new possibilities in semiconductor manufacturing. This direct bonding technology, pioneered by the German research institute, represents a significant shift in traditional fabrication methods. By optimizing the process, it becomes possible to bond different materials directly, which is especially beneficial for the production of multi-junction solar cells. The potential applications are vast, and the technology is seen as a game-changer in the field of photovoltaics. One of the key advantages of this technology is its ability to seamlessly integrate materials that previously had incompatible crystal lattices. For example, it can effectively combine gallium arsenide with silicon, indium phosphide with gallium, or even gallium arsenide with gallium telluride—materials that were once difficult to merge without introducing defects. The research team believes that this combined approach could play a crucial role in the development of next-generation three-terminal solar cells. They anticipate that this innovation will significantly advance the performance of space-based solar systems and concentrator photovoltaic cells, making them more efficient and reliable for future applications. With ongoing improvements and real-world testing, this technology holds great promise for revolutionizing the way we design and manufacture high-performance solar devices. It's an exciting step forward in the quest for more sustainable and efficient energy solutions.

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