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Black phosphorus will be another new two-dimensional semiconductor to replace silicon
In recent years, two-dimensional (2D) crystal materials have emerged as a promising direction in semiconductor research due to their exceptional electrical and optical properties. Following the discovery of graphene and molybdenum disulfide, a groundbreaking development has taken place: black phosphorus has been identified as a new 2D semiconductor material that could potentially replace silicon in future electronic circuits.
Black phosphorus is a layered material composed of single-atom layers stacked together, similar to graphene. However, unlike graphene, which lacks a bandgap and cannot easily switch between conducting and insulating states, black phosphorus possesses a semiconductor bandgap. This makes it suitable for use in digital logic circuits, where the ability to turn on and off is essential.
In a recent study published in *Nature Nanotechnology*, Professor Zhang Yuanbo from Fudan University’s Department of Physics reported the successful fabrication of field-effect transistors using black phosphorus. His team discovered that when black phosphorus is reduced to a nanometer-thick 2D form, it exhibits excellent semiconductor properties, including high electron mobility (~1000 cm²/Vs) and a large leakage current modulation ratio (up to 10,000 times that of graphene), comparable to traditional silicon-based devices.
One of the most significant advantages of black phosphorus is its direct bandgap structure. As shown in the diagram, the conduction band minimum and valence band maximum are aligned at the same point in momentum space. This allows electrons to transition between bands by simply absorbing energy, such as light. In contrast, conventional semiconductors like silicon or molybdenum disulfide have indirect bandgaps, requiring both energy and momentum changes for electron transitions.
This unique property makes black phosphorus an ideal candidate for optoelectronic applications, such as photodetectors and light sensors, capable of detecting a wide range of wavelengths from visible to near-infrared. Its optical performance outperforms many existing materials, offering great potential for next-generation optoelectronic devices.
Professor Zhang Yuanbo recalls that when he first heard about the growth of black phosphorus two years ago, he felt it had strong potential as a semiconductor. “Sure enough, after we fabricated the 2D form of black phosphorus, we found it to have remarkable semiconductor characteristics,†he said. “It could be a key material for future integrated circuits.â€
Despite these exciting results, the full potential of black phosphorus is still being explored. The material is relatively new, and many of its properties remain unknown. Researchers are now focusing on improving sample quality and investigating the behavior of black phosphorus at the monolayer level. “We are also trying to understand how its properties change when it is separated into individual atomic layers,†Professor Zhang added.
As research continues, black phosphorus may open up new possibilities in electronics, optoelectronics, and beyond. While it's too early to predict its exact role in the future, one thing is clear: this material is generating a lot of excitement in the scientific community.