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Foreign companies have not neglected the research and development of new materials and new devices. “From three years from 2009 to 2011, we will focus on developing silicon carbide devices.†Nishimura said, “Because of the high cost of silicon carbide devices, the market’s acceptance of such devices depends on how To what extent the overall cost of the system is reduced. For example, on high-speed electric trains, if a silicon-based IGBT is used, a large cooling device is required; but if a silicon carbide device is used, the cooling device can be miniaturized or even saved. Going, this is very attractive for high-speed trains. Therefore, SiC devices will gradually take advantage of them in specific areas."
New materials such as silicon carbide become opportunities for Chinese companies
In June of this year, the "PCIM China 2010", a grand event of the power semiconductor industry, was held at the Shanghai Everbright Convention and Exhibition Center. Well-known power semiconductor manufacturers at home and abroad showed their new products and many energy-efficient solutions to the audience. The application of power semiconductors in the new energy field has become a hot spot in this exhibition. New materials bring more development opportunities for Chinese enterprises. According to the introduction of the special professor of Yangtze River, Zhejiang University School of Electrical Engineering, silicon carbide, gallium nitride and diamond are common three. Wide-bandgap semiconductor materials, many foreign companies have produced 4 inch silicon carbide wafers in batches, and 6-inch silicon carbide wafers will soon appear, making silicon carbide the most mature of the three wide bandgap materials. Technology provides a solid foundation for the development of silicon carbide power devices. "However, due to the high price of silicon carbide single wafers and epitaxial materials, the price of silicon carbide devices is quite high, which has become a threshold for their large-scale market applications." Sheng added.