Researchers at Tokyo Institute of Technology in Japan have developed a world-leading unipolar N-type thin film transistor with an electron mobility of 7.16cm2 ​​/ Vs. This achievement heralds an exciting future for organic electronic devices, including the development of innovative flexible electronic displays and wearable technology. Researchers all over the world are looking for new materials that can improve the development of organic electronic technology. The research team of the Department of Materials Science and Engineering at Tokyo Institute of Technology led by Tsuyoshi Michinobu and Yang Wang proposed a method to increase the electron mobility of semiconductor polymers, which was previously considered to be difficult to optimize. This new high-performance material achieves an electron mobility of 7.16cm2 ​​/ Vs, which is more than 40% higher than the previous results. The research was published in the "American Chemical Society", the focus of the research is to improve the performance of N-type semiconductor polymer materials. N-type semiconductor materials have electronic advantages, while P-type materials have hole advantages. Michinobu explained that since electrons are more unstable than holes, it is organic electronic devices that want stable N-type semiconductor polymers. A big challenge. Therefore, this research not only solves this challenge, but also the actual demand. Wang pointed out that many solar cells are composed of P-type semiconductor polymers and N-type fullerene derivatives. The disadvantages are high cost, difficult synthesis, and incompatibility with flexible equipment. High-performance N-type semiconductor polymers are very promising to overcome these shortcomings and further promote the research of polymer solar cells. The research team ’s approach included the use of new polymeric derivatives and optimized material architecture. This method is achieved by introducing a vinylidene group capable of forming a hydrogen bond with an adjacent fluorine atom and oxygen atom. In order to optimize the reaction conditions, the introduction of subvinylidene requires superb technology. In general, the synthesized materials have better molecular structure and stronger strength, which helps to improve the mobility of electrons. The researchers confirmed that using grazing incidence wide-angle x-ray scattering technology, a very short π-π stacking of only 3.40 Angstroms was achieved. Michinobu said that for organic semiconductor polymers, this value is the shortest. There are still some challenges, he continued, we need to further optimize the backbone structure. At the same time, side chain groups also play an important role in determining the crystallinity of semiconductor polymers. We still have room for improvement. Wang pointed out that for polymers, the lowest unoccupied molecular orbital (LUMO) energy level is between 3.8eV and 3.9eV. He said that the deeper the LUMO energy level, the faster and more stable the electron transport. Therefore, the further design of introducing sp2-N, fluorine atom and chlorine atom will help to achieve a deeper LUMO energy level. In the future, researchers will intend to improve the stability of N-channel transistors. For practical applications, such as logic circuits like complementary metal oxide semiconductors (CMOS), all-polymer solar cells, organic photodetectors and organic thermoelectric devices, stability is a very critical issue. (Li Xinnan, the First Institute of Electronics, Ministry of Industry and Information Technology)
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