New method integrates different materials into a single chip layer

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New method integrates different materials into a single chip layer

In the past, only very well matched materials could be integrated on one chip layer. According to a report from the Massachusetts Institute of Technology (MIT) website on the 27th, the researchers of the university have developed a brand-new chip manufacturing technology that can integrate two kinds of materials with very inconsistent crystal lattice sizes - molybdenum disulfide and graphene. On the layer, a circuit element chip required by a general-purpose computer is manufactured. The latest research or contribute to the development of more powerful computers.

In the experiment, the researchers first deposited a layer of graphene on a silicon pedestal, and then etched away the graphene that he wished to lay flat on the molybdenum disulfide, and placed a solid bar made of PTAS material on the end of the pedestal. Next, heat PTAS and let gas flow through it. The gas will carry PTAS molecules and attach to the exposed silicon, but will not adhere to the graphene. When PTAS molecules are attached, they react with other gases, resulting in the formation of a layer of molybdenum disulfide.

The researchers published the paper in the latest issue of Advanced Materials. Ling Xi, the first author of the paper and the MIT Electronics Research Laboratory, said: “The material layer in the new chip is only 1 to 3 atoms thick, which helps to produce an ultra-low-power tunneling transistor processor. A more powerful computer. The latest technology also helps integrate optical components into computer chips."

The transistor acts as a variable current switch that either allows the charge to pass through or stops the charge from passing through. In the tunneling transistor, the charge passes through the barrier through quantum mechanical effects. The quantum tunneling effect is more pronounced on a microscopic scale, such as on a material layer of 1 to 3 atomic thicknesses on the new chip. In addition, electron tunneling is immune to thermal phenomena that limit the efficiency of traditional transistors. Therefore, tunneling transistors can not only operate with very low power consumption, but also achieve higher speeds.

Ling Xi said that the latest manufacturing technology is applicable to any material similar to molybdenum disulfide. Lin Yuxuan, a master of electronic engineering and computer science who is also the author of the research paper, said: "This is a new structure that may trigger new physics."

“The latest research shows that two completely different two-dimensional materials can be controlled and integrated into one layer to obtain a lateral heterostructure, which is impressive,” said Philip Kiem, a professor of physics at Harvard University. )

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